PBSS5130T-QR 30V 5A PNP Transistor Low VCE(sat) 85mV High Current Gain SOT-223 Package Automotive Grade AEC-Q101 For Load Switching and Motor Control

PBSS5130T-QR 30V 5A PNP Transistor Low VCE(sat) 85mV High Current Gain SOT-223 Package Automotive Grade AEC-Q101 For Load Switching and Motor Control

Features

• Small SMD plastic package

• Low collector-emitter saturation voltage VCEsat

• High collector current capability: IC and ICM

• Higher efficiency due to less heat generation

• Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

• DC-to-DC conversion

• Supply line switching

• Battery charger

• LCD backlighting

• Driver in low supply voltage applications (e.g. lamps and LEDs)

Description

The PBSS5130T-QR is a high-performance, automotive-grade PNP bipolar junction transistor (BJT) designed for high-current switching and control applications in demanding environments. It features a collector-emitter voltage rating of 30V and a continuous collector current capability of 5A. Its key advantage is an extremely low collector-emitter saturation voltage (VCE(sat)) of typically 85mV at high current, which minimizes power loss and heat generation when the transistor is fully switched on. This high-efficiency performance, combined with good current gain, makes it easy to drive. Packaged in a thermally enhanced SOT-223 (SC-73) surface-mount package and qualified to AEC-Q101 standards, it offers a robust and compact solution for automotive and industrial systems.

INFORMATION

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